单电子存储点器件纳米晶体的表征与建模

ICM 2001 Proceedings. The 13th International Conference on Microelectronics. Pub Date : 1900-01-01 DOI:10.1109/ICM.2001.997481

L. Montès, T. Baron, B. De Salvo, S. Ferraton, J. Zimmermann, J. Gautier

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引用次数: 1

摘要

本文给出了一些实验结果和一个简单的模型，用于研究集成在新一代非易失性单电子存储器中的二氧化硅硅点电容器。这项工作对于未来用于这些针对非常高存储阵列的设备的技术的稳定性至关重要。

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Characterization and modelling of nano-crystals for single electron memory point devices

This paper presents some experimental results and a simple model for the study of capacitors containing silicon dots in silicon dioxide to be integrated in a new generation of nonvolatile single electron memories. This work is essential for the stabilisation of the technology to be used in the future for these devices aimed at very high memory arrays.

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ICM 2001 Proceedings. The 13th International Conference on Microelectronics.

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