Dynamical Frequency Displacement Scheme for Fault-tolerant LLC Topology

Gallium-nitride high-electron-mobility transistor (GaN HEMT) is a promising candidate for implementing next-generation power converter owing to wide semiconductor bandgap with excellent Johnson’s figure of merit [1]. GaN HEMT has matured noticeably over the past decade and opened up the avenue to performance revolution in a wide variety of applications, ranging from active electronically scanned array (AESA) radar systems [2] to ultra-eco-friendly power converter [3]. In this work, a GaN & Silicon hybrid fault-tolerant LLC topology complemented by a deep-learning-based migration control (DLM) and a computation-free migration control (CFM) are introduced. This combination allows one to leverage the intrinsic fault-recovery mechanism of the proposed topology and empower the converter to recuperate from a failing system, an analog to N+1 redundancy power system at a fraction of the cost and reduced point-of-failure.