IC封装基本元件电磁干扰(EMI)分析

N. Huang, L. J. Jiang, Huichun Yu, Gang Li, Shuai Xu, Huasheng Ren
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引用次数: 17

摘要

IC封装的EMC/SI/PI问题已经得到了广泛的证明。但IC封装EMI很少被解决。由于集成电路封装产生的电磁干扰日益显著,本文对其电磁干扰行为进行了系统的研究。为了从根本上了解辐射机制,对地盖、过孔和包装痕迹的辐射贡献进行了调查和单独建模。可以看出,封装电磁干扰具有明显的低频和高频行为。低频行为是由于过孔的赫兹偶极子效应。高频特性是由激发腔模的辐射引起的。本文给出了基于第一性原理的理论分析和基于数值全波解算器的仿真结果,找出了影响集成电路封装电磁干扰的关键因素。这项工作为今后的综合辐射研究提供了基本的建模组件。它直接有利于基本的理解和指导的最佳设计的包装EMI减少。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fundamental components of the IC packaging electromagnetic interference (EMI) analysis
The IC packaging EMC/SI/PI problems have been broadly attested. But IC packaging EMI was seldom addressed. Because the EMI emission by IC packagings is increasingly significant, in this paper, EMI behaviors are systematically studied. To fundamentally understand the radiation mechanism, radiated contributions from ground lids, vias, and traces of the packaging are investigated and modeled separately. It is seen that the packaging EMI has clearly low frequency and high frequency behaviors. The low frequency behavior is due to the Hertzian dipole effects of vias. The high frequency behavior is due to the radiation of excited cavity modes. Both theoretical analysis based on first principles and simulated results based on the numerical full wave solver are provided to find out critical impact factors to IC packaging EMI. This work provides basic modeling components for comprehensive radiation studies in the future. It directly benefits fundamental understandings and guidelines for the optimal design of the packaging EMI reduction.
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