SONOS结构中电荷输运及陷阱的电子结构

1997 IEEE Hong Kong Proceedings Electron Devices Meeting Pub Date : 1997-08-30 DOI:10.1109/HKEDM.1997.642335

V. Gritsenko, Yu. N. Novikov, Y. Morokov, H. Wong

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引用次数: 2

摘要

本实验发现，从Al/Si/sub 3/N/sub 4/界面隧穿电子注入势垒高度为2.0 eV，从Au/Si/sub 3/N/sub 4/界面空穴注入势垒高度为1.5 eV。最后的测量值比光发射测量值更精确。然后确定了一个更精确的MNOS结构能带图。利用MINDO/3进行了数值模拟，结果表明Si/sub 3/N/sub 4/中的Si-Si键可以同时捕获电子和空穴。

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Transport of charge and electronic structure of traps in SONOS structures

In this experiment, we found that the barrier height is 2.0 eV for tunneling electron injecting from Al/Si/sub 3/N/sub 4/ and 1.5 eV for hole injecting from Au/Si/sub 3/N/sub 4/ interface. The last value is more precise than those obtained from photoemission measurement. A more precise energy band diagram for MNOS structure is then determined. Numerical simulation using MINDO/3 was also performed and results show that the Si-Si bond in Si/sub 3/N/sub 4/ can traps both electrons and holes.

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来源期刊

1997 IEEE Hong Kong Proceedings Electron Devices Meeting

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