超薄栅极绝缘子上的功函数控制金属栅极

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) Pub Date : 1999-06-14 DOI:10.1109/VLSIT.1999.799357

K. Nakajima, Y. Akasaka, M. Kaneko, M. Tamaoki, Y. Yamada, T. Shimizu, Y. Ozawa, K. Suguro

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引用次数: 25

摘要

研究了超薄栅极氧化物上金属栅极电极的MOS特性。由于溅射过程中金属的渗透作用，溅射TiN和WN/sub x/电极的栅漏电流远高于CVD TiN电极。此外，还发现了TiN晶体取向的偏差对平带电压的影响。发现CVD TiN薄膜具有高度择优取向，即使在2nm栅极氧化物上也表现出非常稳定的MOS特性。

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Work function controlled metal gate electrode on ultrathin gate insulators

We investigated MOS characteristics of metal gate electrodes on ultrathin gate oxide. Gate leakage currents of sputtered TiN and WN/sub x/ electrodes were found to be much higher than that of CVD TiN electrodes due to metal penetration during sputtering. Moreover, the deviation of crystal orientation of the TiN was found to affect the flat band voltage. The CVD TiN film was found to be formed with highly preferred orientation and to show very stable MOS characteristics, even on 2 nm gate oxide.

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来源期刊

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325)

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