采用0.15 μm CMOS技术的低噪声单光子雪崩二极管

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) Pub Date : 2011-10-13 DOI:10.1109/ESSDERC.2011.6044205

L. Pancheri, D. Stoppa

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引用次数: 62

摘要

提出了两种不同的单光子雪崩二极管(SPAD)结构，采用标准的0.15 nm CMOS技术。介绍了两种具有10 μm有源区直径、单片集成无源淬火电路和快速比较器的探测器的特性。这两种器件的典型暗计数率分别为230cps和160cps，在死区30ns处的后脉冲概率分别为2.1%和1.3%，在λ=470nm处的光子探测概率分别为31%和26%，定时分辨率分别为170ps和60ps。因此，所采用的技术有望实现具有良好综合性能的基于spad的图像传感器。

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Low-noise single Photon Avalanche Diodes in 0.15 μm CMOS technology

Two different Single-Photon Avalanche Diode (SPAD) structures in a standard 0.15-nm CMOS technology are presented. A characterization of the two detectors, having a 10-μm active-area diameter, and monolithically integrated with a passive quenching circuit and a fast comparator is presented. The two devices exhibit respectively a typical dark count rate of 230cps and 160cps, an afterpulsing probability of 2.1% and 1.3% at 30ns dead time, a Photon Detection Probability of 31% and 26 % at λ=470nm and a timing resolution of 170ps and 60ps. The adopted technology is therefore promising for the realization of SPAD-based image sensors with good overall performance.

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2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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