ADVANTOX/sup TM/ more radiation-resistant than full dose SIMOX

Summary form only given. Silicon-On-Insulator (SOI) material has received significant attention due to its ability to provide high performance and power reduction advantages attributable to reduced parasitic substrate capacitance and total oxide isolation of CMOS devices. SOI CMOS technology is now being considered as one of the most promising candidates for high speed and low power digital ULSI circuit applications. We have been producing radiation hard SOI SRAMs and ASICs using full dose SIMOX for some time. We have observed that the incoming full dose SIMOX material needs to be screened for production due to particulates and background impurity. In a search for quality SOI wafers at lower cost for future radiation hard electronics applications, we have evaluated a new low dose SIMOX called ADVANTOX/sup TM/. This paper reports the total dose radiation response of ADVANTOX/sup TM/ buried oxide, compares it to full dose SIMOX, and models the radiation response using a simple equation with two parameters.