S. Van Beek, K. Martens, P. Roussel, G. Donadio, J. Swerts, S. Mertens, A. Thean, G. Kar, A. Furnémont, G. Groeseneken
{"title":"MgO基磁隧道结势垒击穿的电压加速和脉冲依赖","authors":"S. Van Beek, K. Martens, P. Roussel, G. Donadio, J. Swerts, S. Mertens, A. Thean, G. Kar, A. Furnémont, G. Groeseneken","doi":"10.1109/IRPS.2016.7574620","DOIUrl":null,"url":null,"abstract":"STT-MRAM is a promising non-volatile memory. For reliable lifetime predictions, a correct voltage acceleration model is essential. However, there is no consensus over what acceleration model to use. In this paper we study barrier breakdown time over an extended time range. With a maximum likelihood ratio method, we test the statistical significance of fits for different voltage acceleration models. We find that the power law best describes voltage acceleration. In addition we observe that the breakdown time is independent of duty cycle or pulse width.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Voltage acceleration and pulse dependence of barrier breakdown in MgO based magnetic tunnel junctions\",\"authors\":\"S. Van Beek, K. Martens, P. Roussel, G. Donadio, J. Swerts, S. Mertens, A. Thean, G. Kar, A. Furnémont, G. Groeseneken\",\"doi\":\"10.1109/IRPS.2016.7574620\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"STT-MRAM is a promising non-volatile memory. For reliable lifetime predictions, a correct voltage acceleration model is essential. However, there is no consensus over what acceleration model to use. In this paper we study barrier breakdown time over an extended time range. With a maximum likelihood ratio method, we test the statistical significance of fits for different voltage acceleration models. We find that the power law best describes voltage acceleration. In addition we observe that the breakdown time is independent of duty cycle or pulse width.\",\"PeriodicalId\":172129,\"journal\":{\"name\":\"2016 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2016.7574620\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2016.7574620","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Voltage acceleration and pulse dependence of barrier breakdown in MgO based magnetic tunnel junctions
STT-MRAM is a promising non-volatile memory. For reliable lifetime predictions, a correct voltage acceleration model is essential. However, there is no consensus over what acceleration model to use. In this paper we study barrier breakdown time over an extended time range. With a maximum likelihood ratio method, we test the statistical significance of fits for different voltage acceleration models. We find that the power law best describes voltage acceleration. In addition we observe that the breakdown time is independent of duty cycle or pulse width.