用于MEMS/NEMS传感器的无转移晶圆级CVD石墨烯制造工艺

S. Vollebregt, B. Alfano, F. Ricciardella, A. Giesbers, Y. Grachova, H. V. van Zeijl, T. Polichetti, P. Sarro
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引用次数: 25

摘要

本文报道了一种不破坏石墨烯层的新型无转移制备工艺。采用化学气相沉积的方法,利用CMOS兼容的Mo催化剂在4”硅片上沉积了均匀的石墨烯层。在石墨烯沉积后去除Mo层,导致石墨烯在SiO2上的无转移和可控放置。此外,对Mo层进行预图案化可以直接获得可定制的石墨烯几何形状,这是以前从未实现过的。该工艺非常适合大规模制造MEMS/NEMS传感器,特别是那些受益于石墨烯特定特性的传感器,例如气敏。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A transfer-free wafer-scale CVD graphene fabrication process for MEMS/NEMS sensors
In this paper we report a novel transfer-free graphene fabrication process, which does not damage the graphene layer. Uniform graphene layers on 4" silicon wafers were deposited by chemical vapor deposition using the CMOS compatible Mo catalyst. Removal of the Mo layer after graphene deposition results in a transfer-free and controlled placement of the graphene on the underlying SiO2. Moreover, pre-patterning the Mo layer allows customizable graphene geometries to be directly obtained, something that has never been achieved before. This process is extremely suitable for the large-scale fabrication of MEMS/NEMS sensors, especially those benefitting from specific properties of graphene, such as gas sensing.
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