针对低VDS瞬态电压优化的低压MOSFET

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694402

P. Rutter, S. Peake, A. Elford

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引用次数: 6

摘要

采用低压超结方法的30V功率MOSFET技术已被优化，可作为DC-DC降压变换器中的低侧开关。特别是，该技术的设计重点是通过修改MOSFET的主体二极管和输出电容COSS，最大限度地减少高效率DC-DC转换器中出现的电压过调。这导致VDS超调显著降低约50%。

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Low voltage MOSFET optimized for low VDS transient voltages

A 30V power MOSFET technology, employing a low voltage superjunction approach, has been optimized for operation as a low-side switch in a DC-DC buck converter. In particular, this technology has been designed with an emphasis on minimizing the voltage overshoots that occur in high efficiency DC-DC converters by modification of the MOSFET's body diode and output capacitance, COSS. This has resulted in a significant reduction in VDS overshoot of ≈50%.

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来源期刊

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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