线性和圆槽双通道发射极开关晶闸管的比较

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI:10.1109/ISPSD.1995.515029

S. Sridhar, B. J. Baliga

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引用次数: 2

摘要

双通道发射极开关晶闸管(DC-EST)的总导通压降是MOS沟道密度和晶闸管面积的函数。在本文中，证明了总导通压降在最佳浮动N+发射极尺寸下具有最小值。实验验证了线性和圆形电池DC-ESTs的最小导通电压降与分析预测非常吻合。发现最佳的浮动发射极尺寸取决于寿命和工作温度。发现线性直流est的总导通压降的最小值低于圆形设计。然而，对于最佳的浮动发射极尺寸，圆形设计比线性设计具有更高的最大可控电流密度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparison of linear and circular cell dual channel emitter switched thyristors

The total on-state voltage drop in a Dual Channel Emitter Switched Thyristor (DC-EST) is a function of the MOS channel density and the thyristor area. In this paper, it is demonstrated that the total on-state voltage drop has a minimum value at an optimum floating N+ emitter size. The minimum in the total on-state voltage drop was experimentally verified for both linear and circular cell DC-ESTs in excellent agreement with analytical predictions. The optimum floating emitter size was found to depend on the lifetime and the operating temperature. The minimum value of the total on-state voltage drop for the linear DC-EST was found to be lower than that for the circular design. However, for the optimum floating emitter size, the circular design has a higher maximum controllable current density than the linear design.

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Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

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