{"title":"片上互连的电感考虑以获得最佳静电放电保护性能","authors":"S. Sofer, Y. Fefer, Y. Shapira","doi":"10.1109/IPFA.2006.251020","DOIUrl":null,"url":null,"abstract":"The inductance of the on-die interconnection lines may cause voltage resonant effects under electrostatic discharge (ESD) stress. The phase difference of the resonating oscillations along different ESD current flow paths creates a significant local momentary voltage. Information on this inductance enables designers to take into consideration these voltage resonant effects in ESD protection design","PeriodicalId":283576,"journal":{"name":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Inductance Considerations of on-Chip Interconnections for Best Electrostatic Discharge Protection Performance\",\"authors\":\"S. Sofer, Y. Fefer, Y. Shapira\",\"doi\":\"10.1109/IPFA.2006.251020\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The inductance of the on-die interconnection lines may cause voltage resonant effects under electrostatic discharge (ESD) stress. The phase difference of the resonating oscillations along different ESD current flow paths creates a significant local momentary voltage. Information on this inductance enables designers to take into consideration these voltage resonant effects in ESD protection design\",\"PeriodicalId\":283576,\"journal\":{\"name\":\"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2006.251020\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2006.251020","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Inductance Considerations of on-Chip Interconnections for Best Electrostatic Discharge Protection Performance
The inductance of the on-die interconnection lines may cause voltage resonant effects under electrostatic discharge (ESD) stress. The phase difference of the resonating oscillations along different ESD current flow paths creates a significant local momentary voltage. Information on this inductance enables designers to take into consideration these voltage resonant effects in ESD protection design