植入物加热对非晶层形成的贡献:KMC方法

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2020-09-23 DOI:10.23919/SISPAD49475.2020.9241608

P. Julliard, P. Dumas, Frederic Monsieur, F. Hilario, D. Rideau, A. Hémeryck, Fuccio Cristiano

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引用次数: 0

摘要

本文研究了注入诱导加热对硅片非晶化形貌的影响。将基于动态蒙特卡罗方法的仿真方法与实验植入和表征方法进行了比较。我们证明了背压冷却可以用来调整非晶层的厚度。

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Implant heating contribution to amorphous layer formation: a KMC approach

The present work investigates the influence of implantation induced heating on the amorphization profile in silicon wafer. A simulation approach based on a Kinetic Monte Carlo method is compared to experimental implantations and characterizations. We demonstrate that a backside pressure cooling can be used to tune amorphous layer thickness.

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来源期刊

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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