双阈值电压和衬底偏置:高性能,低功耗,0.1 /spl mu/m逻辑设计的关键

Thompson, Young, Greason, Bohr
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引用次数: 69

摘要

我们证明了在高性能低功耗O.lpm逻辑设计中需要双阈值电压器件和衬底偏置。双阈值器件的电路应用不同于以往的报道。双阈值器件由用于静态CMOS电路的低阈值器件和用于噪声裕度敏感动态电路的高阈值器件组成。需要动态衬底偏压来控制由静态电路引起的待机泄漏。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dual Threshold Voltages And Substrate Bias: Keys To High Performance, Low Power, 0.1 /spl mu/m Logic Designs
We show that dual threshold voltage devices and substrate bias are needed in high performance low power O.lpm logic designs. The circuit applications of the dual threshold devices differ from previous reports. In this work, the dual threshold devices consist of a low threshold device for static CMOS circuits and a higher threshold device for noise margin sensitive dynamic circuits. Dynamic substrate bias is needed to control standby leakage resulting from the static circuits.
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