III-V型氮化物器件的退化与失效模式分析

2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits Pub Date : 2007-07-11 DOI:10.1109/IPFA.2007.4378102

J. Tharian

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引用次数: 9

摘要

本文研究了不同应力条件下AlInGaN led的不同失效模式和退化机制。这项工作的另一个目的是根据初始RBL特性制定led的分类标准，并使制造商能够确保更好的可靠性标准。

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Degradation- and Failure Mode Analysis of III-V Nitride Devices

In this work, different failure modes and degradation mechanisms of AlInGaN LEDs were studied under different stress conditions. Another aim of this work was to develop a classification criteria of the LEDs based on initial RBL characteristics and enable the manufacturers ensure better reliability standards.

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2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits

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