在新型W\WO3\Al2O3\Cu CBRAM中，通过局部化学势调谐和控制沙漏灯丝形状，实现了保留、干扰和可变性的改善

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI:10.1109/VLSIT.2016.7573404

L. Goux, A. Belmonte, U. Celano, J. Woo, S. Folkersma, C. Y. Chen, A. Redolfi, A. Fantini, R. Degraeve, S. Clima, W. Vandervorst, M. Jurczak

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引用次数: 10

摘要

我们优化了一种新型W\WO3\Al2O3\Cu CBRAM电池，可以很好地控制沙漏(HG)形导电灯丝(CF)，改善开关可变性，低电流下的干扰和保持。我们首次证明了接近HG收缩的Cu化学势对状态保留的临界影响。

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Retention, disturb and variability improvements enabled by local chemical-potential tuning and controlled Hour-Glass filament shape in a novel W\WO3\Al2O3\Cu CBRAM

We optimize a novel W\WO3\Al2O3\Cu CBRAM cell allowing excellent control of Hour-Glass (HG) shaped Conductive Filament (CF), improving switching variability, disturb and retention at low current. We evidence for the first time the critical impact of the Cu chemical potential close to the HG constriction on state retention.

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2016 IEEE Symposium on VLSI Technology

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