芯片级封装中无铅晶圆级底填料的工艺优化

Y. Liu, G. Dutt, A. Xiao
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引用次数: 3

摘要

晶圆级底填是在晶圆制造过程中,在晶圆上预涂底填材料的一种新兴技术。新型的底填材料和工艺使芯片制造商能够在晶圆级进行底填,从而消除了封装过程中的多个步骤,并显着降低了生产成本。然而,无铅焊料对这项新技术提出了重大挑战。与共晶焊料相比,无铅焊料往往具有较低的屈服应力,需要较高的回流温度并形成脆性接头。随着无铅兼容封装材料需求的不断增长,需要进一步推进晶圆级底填材料和工艺优化,以确保与无铅焊料的兼容性、更好的空化性能和更高的互连成品率。我们已经开发出新的晶圆级下填材料,用于芯片级封装,与无铅组装兼容。这些材料涂覆在晶圆上,经过b级后形成清晰透明的涂层,可以切成涂层模具,不会发生分层和开裂。本文讨论了b级步骤中不同加热方式和不同设备对回流过程中底填料流量、b级后残余溶剂、焊膏涂抹和互连成品率的影响。通过优化材料性能和b级条件,我们证明了晶圆级下填充材料可以在无铅组装中实现高互连成品率,而不会造成涂污和空洞。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Process optimization of lead-free wafer-level underfill material used in chip scale packaging
Wafer-level underfilling is an emerging technology that consists of pre-applying the underfill material on wafer during the wafer fabrication process. The novel underfill material and the process enable the chip manufacturers to perform underfill at the wafer-level, thereby eliminating multiple steps in the packaging process and cutting production cost significantly. However, lead-free solder poses significant challenge to this new technology. Compared to eutectic solder, lead-free solder tends to have a lower yield stress, requires higher reflow temperature and forms brittle joints. With increasing demand of lead-free compatible packaging material, further advancement of wafer level underfill material and process optimization are necessary to ensure compatibility with lead-free solders, better voiding performance and higher interconnection yield. We have developed novel wafer level underfill materials for chip scale packaging that are compatible with lead-free assembly. These materials, when coated on the wafer, form clear, transparent coating after B-stage that can be diced into coated dies without any delaminating and cracking. In this paper we discuss the effect of various heating profiles and different equipment used in the B-stage step on flow of underfill during the reflow, residual solvent after B-stage, solder paste smearing, and interconnection yield. By optimizing the material properties and B-stage conditions, we demonstrated that wafer level underfill material can achieve high interconnect yield without causing smearing and voiding in lead-free assembly.
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