P-STT-MRAM热稳定性及其温度依赖性建模

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2018-04-01 DOI:10.1109/VLSI-TSA.2018.8403857

L. Tillie, B. Dieny, R. Sousa, J. Chatterjee, S. Auffret, N. Lamard, J. Guelffucci, E. Nowak, I. Prejbeanu

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引用次数: 1

摘要

由于其高速[1]，高耐用性[2]和非易失性，垂直STT-MRAM (P-STT-MRAM)被视为非易失性内存嵌入式应用的最佳候选之一。然而，它们在高温下的数据保留时间如焊接回流准则和汽车应用温度范围仍然是一个临界点。本文对直径从20nm到150nm的P-STT-MRAM器件进行了温度测试。热稳定系数已电提取温度高达190°C。然后测量了存储层居里温度相对于体积值的损失，并将其与热稳定性值直接联系起来。最后，提出了一个预测热稳定因子温度依赖性的模型。

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P-STT-MRAM thermal stability and modeling of its temperature dependence

Due to their high speed[1], high endurance[2] and non-volatility, perpendicular STT-MRAM (P-STT-MRAM) are seen as one of the best candidate for non volatile memory embedded applications. However, their data retention time at elevated temperature such as the soldering reflow criterion and the automotive application temperature range is still a critical point. In this paper, P-STT-MRAM devices with diameters ranging from 20nm to 150nm have been tested in temperature. The thermal stability factor has been extracted electrically for temperatures up to 190°C. Then the loss in the Curie temperature of the storage layer compared to bulk values has been measured and directly linked to the thermal stability values. At last, a model is proposed to predict the temperature dependance of the thermal stability factor.

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2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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