声子相互作用对限制微机械谐振器f.Q积的影响

R. Tabrizian, Mina Rais-Zadeh, Farrokh Ayazi
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引用次数: 168

摘要

讨论了声子相互作用对确定微机械谐振器中f.Q积上限的贡献。在MEMS界有一种看法,即微谐振器的最大f.Q积仅限于由谐振器的材料特性决定的“频率无关常数”[1]。本文讨论了当频率高于ωτ= 1/τ时,其中τ为声子弛豫时间,f.Q积不再是常数而是频率的线性函数。这使得在GHz微机械谐振器中达到非常高的q成为可能。此外,我们表明< 100 >是在~ 750 MHz以上的体声模硅谐振器中获得非常高Q的首选晶体取向,而< 100 >是在较低频率下获得高Q的首选方向。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of phonon interactions on limiting the f.Q product of micromechanical resonators
We discuss the contribution of phonon interactions in determining the upper limit of f.Q product in micromechanical resonators. There is a perception in the MEMS community that the maximum f.Q product of a microresonator is limited to a “frequency-independent constant” determined by the material properties of the resonator [1]. In this paper, we discuss that for frequencies higher than ωτ= 1/τ, where τ is the phonon relaxation time, the f.Q product is no longer constant but a linear function of frequency. This makes it possible to reach very high Qs in GHz micromechanical resonators. Moreover, we show that 〈100〉 is the preferred crystalline orientation for obtaining very high Q in bulk-acoustic-mode silicon resonators above ∼750 MHz, while 〈100〉 is the preferred direction for achieving high-Q at lower frequencies.
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