2003第八届等离子体和过程诱导损伤国际研讨会。(猫。No.03TH8669)

2003 8th International Symposium Plasma- and Process-Induced Damage. Pub Date : 1900-01-01 DOI:10.1109/PPID.2003.1199715

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引用次数: 0

摘要

讨论了以下主题:CMOS中的工艺损伤;等离子体蚀刻工艺;栅极充电效应;等离子体损伤;缩放效果;超薄电介质;plasma-induced充电;可靠性问题;离子注入技术;电子遮蔽损伤;栅极氧化质量;伤害监测;IC互连设计;等离子设备趋势;CMOS降阶。

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2003 8th International Symposium on Plasma- and Process-Induced Damage. (Cat. No.03TH8669)

The following topics are dealt with: process induced damage in CMOS; plasma etching processes; gate charging effect; plasma induced damage; scaling effects; ultrathin dielectrics; plasma-induced charging; reliability issues; ion implantation technology; electron shading damage; gate oxide quality; damage monitoring; IC interconnection designs; plasma equipment trends; and CMOS downscaling.

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2003 8th International Symposium Plasma- and Process-Induced Damage.

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