Al/Al叠层结构抑制应力诱导和电迁移失效

Digest of Technical Papers.1990 Symposium on VLSI Technology Pub Date : 1990-06-04 DOI:10.1109/VLSIT.1990.110991

S. Shima, H. Ito, S. Shingubara

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引用次数: 0

摘要

研制了一种Al/Al堆叠多层互连材料，该材料可以在没有金属屏障的情况下抑制应力诱导和电迁移失效。应力诱发的失效几乎完全被抑制，电迁移寿命提高了四倍以上。用显微组织和力学性能的图解结果解释了高可靠性的机理

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Suppressing stress-induced and electromigration failures with Al/Al stacked structure

A Al/Al stacked multilayered interconnection that can suppress both stress-induced and electromigration failures without barrier metal was developed. Stress-induced failures are almost completely suppressed and electromigration lifetime is improved more than four times. The higher reliability mechanism is explained in terms of graphed results of the microstructure and mechanical properties

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Digest of Technical Papers.1990 Symposium on VLSI Technology

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