可靠性、测试和I/sub DDQ/测量

Digest of Papers IEEE International Workshop on IDDQ Testing Pub Date : 1997-11-05 DOI:10.1109/IDDQ.1997.633021

C. Hawkins, A. Keshavarzi, J. Soden

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引用次数: 10

摘要

I/sub DDQ/测量与CMOS IC测试密切相关，但I/sub DDQ/也与IC可靠性有长期联系。本文综述了可靠性与I/sub DDQ/测试的关系。讨论了三个可靠性问题:基本失效机制，I/sub DDQ/与磨损的关系，以及使用测试数据预测可靠性性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reliability, test, and I/sub DDQ/ measurements

I/sub DDQ/ measurements are strongly identified with CMOS IC testing, however I/sub DDQ/ also has long term links to IC reliability. This paper overviews the association of reliability and I/sub DDQ/ testing. Three reliability topics are discussed: fundamental failure mechanisms, the relation of I/sub DDQ/ to burn-in, and the use of test data to predict reliability performance.

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Digest of Papers IEEE International Workshop on IDDQ Testing

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