漏极扩展finfet静电放电特性的物理分析

2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD) Pub Date : 2018-09-01 DOI:10.23919/EOS/ESD.2018.8509695

B. Sampath Kumar, Milova Paul, H. Gossner, M. Shrivastava

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引用次数: 3

摘要

本文探讨了ESD应力条件下漏极扩展FinFET的物理特性。全面讨论了DeFinFET失效机制的关键特征，如双极触发、电导率调制和局部热点形成。探讨了多指定义场效应管的非均匀性和灯丝形成问题。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Physical Insights into the ESD behavior of Drain Extended FinFETs

In this paper, physical insights of Drain extended FinFET under ESD stress condition is explored. Key features like bipolar triggering, conductivity modulation and localized hot spot formation pertaining to DeFinFET failure mechanism are discussed comprehensively. Non-uniformity and filament formation in multi-finger DeFinFET is explored.

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来源期刊

2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

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