{"title":"用于高速千兆dram的圆柱形全金属电容器技术","authors":"Drynan, Nakajima, Akimoto, Saito, Suzuki, Takaishi","doi":"10.1109/VLSIT.1997.623743","DOIUrl":null,"url":null,"abstract":"A cylindrical Full Metal Capacitor (FMC) elcctrode with integrated metal contact-holc plug is proposed in accordancc with thc trend in DRAMs towards low-tcmpcrature processcs, low-resistance conductors, and high-e capacitor dielcctiics in order to realizc high-speed gigabitclass rncmoiy for multimedia applications. Thc FMC technology comprises such features as a W contact-hole plug. a TIN etchstopper, a PVD+CVD-W cylinder body, W-CMP with a protective cylindcr plug. a 1.6nm tox,, Ta205 dielectric, and a TiN top elcctrodc. Gigabit-scalc W cylinders have yieldcd capacitances ovcr 4Off'lccll. with higher values contingent on processes and parameters. Trends in DRAM Technology Toward FMC Concept","PeriodicalId":414778,"journal":{"name":"1997 Symposium on VLSI Technology","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Cylindrical Full Metal Capacitor Technology For High-speed Gigabit DRAMs\",\"authors\":\"Drynan, Nakajima, Akimoto, Saito, Suzuki, Takaishi\",\"doi\":\"10.1109/VLSIT.1997.623743\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A cylindrical Full Metal Capacitor (FMC) elcctrode with integrated metal contact-holc plug is proposed in accordancc with thc trend in DRAMs towards low-tcmpcrature processcs, low-resistance conductors, and high-e capacitor dielcctiics in order to realizc high-speed gigabitclass rncmoiy for multimedia applications. Thc FMC technology comprises such features as a W contact-hole plug. a TIN etchstopper, a PVD+CVD-W cylinder body, W-CMP with a protective cylindcr plug. a 1.6nm tox,, Ta205 dielectric, and a TiN top elcctrodc. Gigabit-scalc W cylinders have yieldcd capacitances ovcr 4Off'lccll. with higher values contingent on processes and parameters. Trends in DRAM Technology Toward FMC Concept\",\"PeriodicalId\":414778,\"journal\":{\"name\":\"1997 Symposium on VLSI Technology\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1997.623743\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1997.623743","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Cylindrical Full Metal Capacitor Technology For High-speed Gigabit DRAMs
A cylindrical Full Metal Capacitor (FMC) elcctrode with integrated metal contact-holc plug is proposed in accordancc with thc trend in DRAMs towards low-tcmpcrature processcs, low-resistance conductors, and high-e capacitor dielcctiics in order to realizc high-speed gigabitclass rncmoiy for multimedia applications. Thc FMC technology comprises such features as a W contact-hole plug. a TIN etchstopper, a PVD+CVD-W cylinder body, W-CMP with a protective cylindcr plug. a 1.6nm tox,, Ta205 dielectric, and a TiN top elcctrodc. Gigabit-scalc W cylinders have yieldcd capacitances ovcr 4Off'lccll. with higher values contingent on processes and parameters. Trends in DRAM Technology Toward FMC Concept
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