超晶格微型冰箱与光电器件的倒装键合

Yan Zhang, G. Zeng, J. Piprek, A. Bar-Cohen, A. Shakouri
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引用次数: 3

摘要

采用三维电热模型研究了inp基薄膜In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As超晶格微电冰箱在40/spl倍/40/spl μ /m/sup 2/至120/spl倍/120/spl μ /m/sup 2/之间的不同器件尺寸。讨论了现有器件的最大冷却密度和冷却功率密度,分析了现有器件的非理想性,并提出了一种优化结构。仿真结果表明,采用基于当前器件几何结构的优化结构,冷却功率密度超过300 W/cm/sup 2/,最大冷却温度为30/spl℃。此外,我们还证明,当InGaAs/InAlAs超晶格的当前性能值通过非守恒的横向动量增强五倍时,可以实现超过10/spl度/C,功率密度超过900 W/cm/sup / 2/的最大冷却。除了单片集成外,我们还提出了一种倒装芯片键合解决方案,将这些微型冰箱与光电芯片集成在一起。本文将进行初步的三维电热模拟,分析该双芯片集成模型的散热效果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Superlattice microrefrigerators flip-chip bonded with optoelectronic devices
A 3D electrothermal model was developed to study the InP-based thin film In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As superlattice microrefrigerators for various device sizes, ranging from 40/spl times/40/spl mu/m/sup 2/ to 120/spl times/120/spl mu/m/sup 2/. We discussed maximum cooling and cooling power densities for current devices, analyzed the non-idealities of current devices and proposed an optimized structure. The simulation results demonstrated a maximum cooling of 30/spl deg/C with cooling power density over 300 W/cm/sup 2/ with an optimized structure based on the current device geometry. Furthermore, we also demonstrated that a maximum cooling, over 10/spl deg/C with power density over 900 W/cm/sup 2/, could be possible when the current figure of merit of InGaAs/InAlAs superlattice is enhanced five times with the non-conserved lateral momentum. Besides monolithic integration, we also propose a flip-chip bonded solution to integrate these microrefrigerator with the optoelectronic chips. Preliminary 3D electrothermal simulation will be present to analyze its cooling effects for this 2-chip integration model.
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