{"title":"快速退火过程中离子注入硼和BF/sub 2/扩散的物理模型","authors":"H. Kinoshita, D. Kwong","doi":"10.1109/IEDM.1992.307333","DOIUrl":null,"url":null,"abstract":"The diffusion during rapid thermal annealing (RTA) of ion implanted boron and BF/sub 2/ was modeled by considering the reaction kinetics between point defects and boron. The diffusion model utilizes Monte Carlo generated point defect profiles, an extended defect model and a surface amorphization model for high dose implantation. Excellent simulation results have been achieved by using a single set of diffusion and kinetic parameters to model the enhanced diffusion of boron during RTA for a wide range of B and BF/sub 2/ implant doses.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Physical model for the diffusion of ion implanted boron and BF/sub 2/ during rapid thermal annealing\",\"authors\":\"H. Kinoshita, D. Kwong\",\"doi\":\"10.1109/IEDM.1992.307333\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The diffusion during rapid thermal annealing (RTA) of ion implanted boron and BF/sub 2/ was modeled by considering the reaction kinetics between point defects and boron. The diffusion model utilizes Monte Carlo generated point defect profiles, an extended defect model and a surface amorphization model for high dose implantation. Excellent simulation results have been achieved by using a single set of diffusion and kinetic parameters to model the enhanced diffusion of boron during RTA for a wide range of B and BF/sub 2/ implant doses.<<ETX>>\",\"PeriodicalId\":287098,\"journal\":{\"name\":\"1992 International Technical Digest on Electron Devices Meeting\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 International Technical Digest on Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1992.307333\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307333","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Physical model for the diffusion of ion implanted boron and BF/sub 2/ during rapid thermal annealing
The diffusion during rapid thermal annealing (RTA) of ion implanted boron and BF/sub 2/ was modeled by considering the reaction kinetics between point defects and boron. The diffusion model utilizes Monte Carlo generated point defect profiles, an extended defect model and a surface amorphization model for high dose implantation. Excellent simulation results have been achieved by using a single set of diffusion and kinetic parameters to model the enhanced diffusion of boron during RTA for a wide range of B and BF/sub 2/ implant doses.<>
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