优异的阻性开关记忆:氧化钨混合物中氧化钨的影响

Proceedings of Technical Program of 2012 VLSI Technology, System and Application Pub Date : 2012-04-23 DOI:10.1109/VLSI-TSA.2012.6210124

S. Z. Rahaman, S. Maikap, W. Chen, T. Tien, H. Y. Lee, F. Chen, M. Kao, M. Tsai

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引用次数: 2

摘要

本文首次研究了简单且兼容CMOS的W/WOx/GeOx:WOx混合结构下，GeOx层对电阻开关存储器性能的影响。所有层均经HRTEM和XPS确认。与W/WOx/W结构相比，该存储器件在电阻比、均匀性和程序/擦除周期方面具有更高的性能。在±1V的大Vread下，具有良好的读取耐久性和>;106的程序/擦除周期。此外，该存储器件在85°C下表现出强大的数据保留能力。该器件可在0.1 μA的低电流下工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Excellent resistive switching memory: Influence of GeOx in WOx mixture

Influence of GeO_x layer on resistive switching memory performance in a simple and CMOS compatible W/WO_x/GeO_x:WO_x mixture/W structure has been investigated for the first time. All layers are confirmed by both HRTEM and XPS. This memory device has enhanced performance in terms of the resistance ratio, uniformity, and program/erase cycles as compared to W/WO_x/W structure. An excellent read endurance and program/erase cycles of >;10⁶ at large V_read of ±1V are obtained. Furthermore, the memory device exhibits robust data retention at 85°C. This device can be operated as low current as 0.1 μA.

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Proceedings of Technical Program of 2012 VLSI Technology, System and Application

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