水滴引起的p型MOSFET硅化物缺失层的解析

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2016-07-01 DOI:10.1109/IPFA.2016.7564271

Siew Mei Teo, Khairul Aiman Yusof, N. Hat

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引用次数: 0

摘要

在最后的测试中，一些晶圆制造缺陷无法被筛选出来。这些有缺陷的部件将不可避免地到达客户手中。本文旨在探讨硅化物层缺失这一晶圆制造缺陷的失效分析方法及解决方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Resolution of missing silicide layer on P-type MOSFET caused by water droplet

Some of the wafer fabrication defects are unable to be screened out during final test. It is inevitable that these defective units will reach customer. This paper aims to discuss on the failure analysis approach and resolution of wafer fabrication defect, missing silicide layer.

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来源期刊

2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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