实现背面高形貌3D晶圆的预组装工艺

A. Podpod, C. Demeurisse, F. Inoue, F. Duval, J. Visker, J. de Vos, K. Rebibis, R. A. Miller, G. Beyer, E. Beyne
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引用次数: 0

摘要

在一个特定的3D芯片堆叠场景中,使用硅中间层技术进行高带宽互连应用1,其中包括硅中间层在内的芯片在将其放置到基板上之前首先堆叠,这对预组装工艺提出了挑战。本文介绍了挑战所在的领域,并报告了解决方案,该解决方案使具有高地形的3D晶圆(Si中间层)的预组装过程成为可能:UV切割带可以处理手头的复杂性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Enabling pre-assembly process of 3D wafers with high topography at the backside
In a specific 3D die to die stacking scenario using a Si interposer technology for high band width interconnect applications1, wherein dies including the Silicon interposer were stacked first before placing it onto the substrate, posts a challenge on pre-assembly processes. This paper presents what and which areas the challenges are and reports on the solution found that enabled the pre-assembly processes for 3D wafers with high topography at the backside (Si interposer): a UV dicing tape that can handle the complexities at hand.
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