铜金属化用CVD TaN阻挡层及DRAM底电极

Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247) Pub Date : 1999-05-26 DOI:10.1109/IITC.1999.787096

A. Paranjpe, R. Bubber, L. Velo, G. Shang, S. Gopinath, J. Dalton, M. Moslehi

{"title":"铜金属化用CVD TaN阻挡层及DRAM底电极","authors":"A. Paranjpe, R. Bubber, L. Velo, G. Shang, S. Gopinath, J. Dalton, M. Moslehi","doi":"10.1109/IITC.1999.787096","DOIUrl":null,"url":null,"abstract":"The extendibility of PVD barriers is expected to become a limiting factor for 0.13 /spl mu/m copper metallization, and an MOCVD barrier is likely to be indispensable due to its superior conformality. A 400/spl deg/C process for deposition of a nanocrystalline conformal (>85%) MOCVD TaN layer in high aspect ratio (AR>5) trenches/vias with barrier properties equivalent to c-PVD TaN has been developed using a liquid organometallic precursor. This enables barrier thickness to be scaled to <125 /spl Aring/ compared to >250 /spl Aring/ for i-PVD TaN. Resistivity of /spl sim/1000 /spl mu//spl Omega/-cm has been achieved, which can be further reduced through barrier engineering. MOCVD TaN is a key enabler for extendibility of copper metallization to the sub-0.13 /spl mu/m technology node.","PeriodicalId":319568,"journal":{"name":"Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"CVD TaN barrier for copper metallization and DRAM bottom electrode\",\"authors\":\"A. Paranjpe, R. Bubber, L. Velo, G. Shang, S. Gopinath, J. Dalton, M. Moslehi\",\"doi\":\"10.1109/IITC.1999.787096\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The extendibility of PVD barriers is expected to become a limiting factor for 0.13 /spl mu/m copper metallization, and an MOCVD barrier is likely to be indispensable due to its superior conformality. A 400/spl deg/C process for deposition of a nanocrystalline conformal (>85%) MOCVD TaN layer in high aspect ratio (AR>5) trenches/vias with barrier properties equivalent to c-PVD TaN has been developed using a liquid organometallic precursor. This enables barrier thickness to be scaled to <125 /spl Aring/ compared to >250 /spl Aring/ for i-PVD TaN. Resistivity of /spl sim/1000 /spl mu//spl Omega/-cm has been achieved, which can be further reduced through barrier engineering. MOCVD TaN is a key enabler for extendibility of copper metallization to the sub-0.13 /spl mu/m technology node.\",\"PeriodicalId\":319568,\"journal\":{\"name\":\"Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.1999.787096\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.1999.787096","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

PVD势垒的可扩展性预计将成为0.13 /spl μ l /m铜金属化的限制因素，而MOCVD势垒由于其优越的一致性可能是必不可少的。利用液态有机金属前驱体，在高宽高比(AR>5)沟槽/通孔中沉积了一种纳米晶共形(>85%)MOCVD TaN层，其阻挡性能相当于C - pvd TaN。这使得i-PVD TaN的阻挡层厚度可以缩放到250 /spl /。电阻率达到/spl sim/1000 /spl mu//spl Omega/-cm，可通过阻隔工程进一步降低。MOCVD TaN是将铜金属化扩展到低于0.13 /spl mu/m技术节点的关键推动者。

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CVD TaN barrier for copper metallization and DRAM bottom electrode

The extendibility of PVD barriers is expected to become a limiting factor for 0.13 /spl mu/m copper metallization, and an MOCVD barrier is likely to be indispensable due to its superior conformality. A 400/spl deg/C process for deposition of a nanocrystalline conformal (>85%) MOCVD TaN layer in high aspect ratio (AR>5) trenches/vias with barrier properties equivalent to c-PVD TaN has been developed using a liquid organometallic precursor. This enables barrier thickness to be scaled to <125 /spl Aring/ compared to >250 /spl Aring/ for i-PVD TaN. Resistivity of /spl sim/1000 /spl mu//spl Omega/-cm has been achieved, which can be further reduced through barrier engineering. MOCVD TaN is a key enabler for extendibility of copper metallization to the sub-0.13 /spl mu/m technology node.

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Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247)

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