{"title":"一种用于高精度单端开关电容电路的简单翻转开关,减少了电荷注入","authors":"Ravikumar Adusumalli, Rahul Thottathil, Krishna Kanth Gowri Avalur","doi":"10.1109/MOS-AK.2019.8902421","DOIUrl":null,"url":null,"abstract":"This paper presents a architecture to reduce charge injection in single-ended switched capacitor networks where high precision is inevitable. The key advantage of this architecture in switched capacitor network is that without any additional circuitry, the switch non-idealities like charge injection and clock feedthrough can be improved significantly. The design is done in 0.18µm TSMC process. The results shows that the proposed switching scheme is 50% more accurate compared to all other conventional techniques in handling charge injection modeling inaccuracies in CMOS switches.","PeriodicalId":178751,"journal":{"name":"2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK India)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Simple Flip-Around Switch with Reduced Charge Injection for High Precision Single-Ended Switched-Capacitor Circuits\",\"authors\":\"Ravikumar Adusumalli, Rahul Thottathil, Krishna Kanth Gowri Avalur\",\"doi\":\"10.1109/MOS-AK.2019.8902421\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a architecture to reduce charge injection in single-ended switched capacitor networks where high precision is inevitable. The key advantage of this architecture in switched capacitor network is that without any additional circuitry, the switch non-idealities like charge injection and clock feedthrough can be improved significantly. The design is done in 0.18µm TSMC process. The results shows that the proposed switching scheme is 50% more accurate compared to all other conventional techniques in handling charge injection modeling inaccuracies in CMOS switches.\",\"PeriodicalId\":178751,\"journal\":{\"name\":\"2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK India)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK India)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MOS-AK.2019.8902421\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE Conference on Modeling of Systems Circuits and Devices (MOS-AK India)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MOS-AK.2019.8902421","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Simple Flip-Around Switch with Reduced Charge Injection for High Precision Single-Ended Switched-Capacitor Circuits
This paper presents a architecture to reduce charge injection in single-ended switched capacitor networks where high precision is inevitable. The key advantage of this architecture in switched capacitor network is that without any additional circuitry, the switch non-idealities like charge injection and clock feedthrough can be improved significantly. The design is done in 0.18µm TSMC process. The results shows that the proposed switching scheme is 50% more accurate compared to all other conventional techniques in handling charge injection modeling inaccuracies in CMOS switches.