纳米电子栅极设计中的宇称预测综合

D. Tran, A. Virazel, A. Bosio, L. Dilillo, P. Girard, S. Pravossoudovitch, H. Wunderlich
{"title":"纳米电子栅极设计中的宇称预测综合","authors":"D. Tran, A. Virazel, A. Bosio, L. Dilillo, P. Girard, S. Pravossoudovitch, H. Wunderlich","doi":"10.1109/TEST.2010.5699312","DOIUrl":null,"url":null,"abstract":"In this paper we investigate the possibility of using commercial synthesis tools to build parity predictors for nano-electronic gates designs. They will be used as redundant resources for robustness improvement for future CMOS technology nodes.","PeriodicalId":265156,"journal":{"name":"2010 IEEE International Test Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Parity prediction synthesis for nano-electronic gate designs\",\"authors\":\"D. Tran, A. Virazel, A. Bosio, L. Dilillo, P. Girard, S. Pravossoudovitch, H. Wunderlich\",\"doi\":\"10.1109/TEST.2010.5699312\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we investigate the possibility of using commercial synthesis tools to build parity predictors for nano-electronic gates designs. They will be used as redundant resources for robustness improvement for future CMOS technology nodes.\",\"PeriodicalId\":265156,\"journal\":{\"name\":\"2010 IEEE International Test Conference\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Test Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/TEST.2010.5699312\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Test Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TEST.2010.5699312","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

在本文中,我们研究了使用商业合成工具来构建纳米电子门设计宇称预测器的可能性。它们将作为冗余资源用于未来CMOS技术节点的鲁棒性改进。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Parity prediction synthesis for nano-electronic gate designs
In this paper we investigate the possibility of using commercial synthesis tools to build parity predictors for nano-electronic gates designs. They will be used as redundant resources for robustness improvement for future CMOS technology nodes.
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