Electromigration in eutectic SnPb solder bumps with Ni/Cu UBM

This study investigates the electromigration behavior of eutectic SnPb solder bumps with Ni/Cu UBM, in which the thickness of the Ni and Cu layer is 3 /spl mu/m and 5 /spl mu/m, respectively. It was found that the SnPb solder joints have better electromigration resistance than that of SnAg bumps with thin film UBM. The thermal characteristic of SnPb solder joints under current stressing was measured by infrared technique. The Joule heating effect was less serious due to the wide Al trace of 100 /spl mu/m. Besides, a three-dimensional simulation on current density distribution was performed to examine the current crowding behavior in the joint. The results show that the current crowding occurs at the entrance point of the Al trace, which caused higher formation rate of intermetallic compounds there, and thus open failure occurred.