O. Flament, P. Paillet, D. Hervé, O. Musseau, J. Leray, B. Aspar
{"title":"生长的SIMOX底物的高剂量响应","authors":"O. Flament, P. Paillet, D. Hervé, O. Musseau, J. Leray, B. Aspar","doi":"10.1109/SOI.1993.344596","DOIUrl":null,"url":null,"abstract":"The pseudo-MOS transistor (/spl Psi/-MOSFET) has been proposed as a cheap and easy tool to characterize as-grown SOI wafers and to anticipate the radiation hardness performance of technologies manufactured upon these substrates. The aim of this study is to check the ability of this technique to investigate SIMOX response for doses up to 100 Mrad(SiO/sub 2/). Direct comparison with basic MOS transistors reveals the influence of the process.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High dose response of as-grown SIMOX substrates\",\"authors\":\"O. Flament, P. Paillet, D. Hervé, O. Musseau, J. Leray, B. Aspar\",\"doi\":\"10.1109/SOI.1993.344596\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The pseudo-MOS transistor (/spl Psi/-MOSFET) has been proposed as a cheap and easy tool to characterize as-grown SOI wafers and to anticipate the radiation hardness performance of technologies manufactured upon these substrates. The aim of this study is to check the ability of this technique to investigate SIMOX response for doses up to 100 Mrad(SiO/sub 2/). Direct comparison with basic MOS transistors reveals the influence of the process.<<ETX>>\",\"PeriodicalId\":308249,\"journal\":{\"name\":\"Proceedings of 1993 IEEE International SOI Conference\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1993 IEEE International SOI Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1993.344596\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1993 IEEE International SOI Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1993.344596","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The pseudo-MOS transistor (/spl Psi/-MOSFET) has been proposed as a cheap and easy tool to characterize as-grown SOI wafers and to anticipate the radiation hardness performance of technologies manufactured upon these substrates. The aim of this study is to check the ability of this technique to investigate SIMOX response for doses up to 100 Mrad(SiO/sub 2/). Direct comparison with basic MOS transistors reveals the influence of the process.<>
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