基于纳米tsv技术的微碰撞晶圆无损检测卡集成

T. Fukushima, Shinichi Sakuyama, Masatomo Takahashi, H. Hashimoto, J. Bea, Theodorus Marcello, H. Kino, Tetsu Tanaka, M. Koyanagi, M. Murugesan
{"title":"基于纳米tsv技术的微碰撞晶圆无损检测卡集成","authors":"T. Fukushima, Shinichi Sakuyama, Masatomo Takahashi, H. Hashimoto, J. Bea, Theodorus Marcello, H. Kino, Tetsu Tanaka, M. Koyanagi, M. Murugesan","doi":"10.1109/3dic52383.2021.9687601","DOIUrl":null,"url":null,"abstract":"This paper describes nano-scale probe integration on a printed circuit board (PCB) using electroless TSV formation technology for achieving small scrub marks when testing solder microbumps formed on LSI wafers. The nanoprobes are resulted from the backside grinding and dry etching of Si substrates in which an array of Ni/Cu-TSVs with a tip diameter of 500 nm are fabricated. The TSV nanoprobes are also transferred to the PCB before the Si etch step. We demonstrate the probe contact to a thin solder layer for testing wafer-level packages with fine-pitch microbumps. In addition, the nanoprobes are electrically and mechanically characterized in this study.","PeriodicalId":120750,"journal":{"name":"2021 IEEE International 3D Systems Integration Conference (3DIC)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Integration of Damage-less Probe Cards Using Nano-TSV Technology for Microbumped Wafer Testing\",\"authors\":\"T. Fukushima, Shinichi Sakuyama, Masatomo Takahashi, H. Hashimoto, J. Bea, Theodorus Marcello, H. Kino, Tetsu Tanaka, M. Koyanagi, M. Murugesan\",\"doi\":\"10.1109/3dic52383.2021.9687601\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes nano-scale probe integration on a printed circuit board (PCB) using electroless TSV formation technology for achieving small scrub marks when testing solder microbumps formed on LSI wafers. The nanoprobes are resulted from the backside grinding and dry etching of Si substrates in which an array of Ni/Cu-TSVs with a tip diameter of 500 nm are fabricated. The TSV nanoprobes are also transferred to the PCB before the Si etch step. We demonstrate the probe contact to a thin solder layer for testing wafer-level packages with fine-pitch microbumps. In addition, the nanoprobes are electrically and mechanically characterized in this study.\",\"PeriodicalId\":120750,\"journal\":{\"name\":\"2021 IEEE International 3D Systems Integration Conference (3DIC)\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International 3D Systems Integration Conference (3DIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/3dic52383.2021.9687601\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International 3D Systems Integration Conference (3DIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/3dic52383.2021.9687601","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

摘要

本文描述了在印刷电路板(PCB)上使用化学TSV形成技术的纳米探针集成,用于在测试LSI晶圆上形成的焊料微凸点时实现小磨痕。纳米探针是通过对Si衬底进行背面研磨和干刻蚀而得到的,其中制备了一系列尖端直径为500 nm的Ni/ cu - tsv。TSV纳米探针也在Si蚀刻步骤之前转移到PCB上。我们演示了探针与薄焊料层的接触,用于测试具有细间距微凸点的晶圆级封装。此外,本研究还对纳米探针进行了电学和力学表征。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Integration of Damage-less Probe Cards Using Nano-TSV Technology for Microbumped Wafer Testing
This paper describes nano-scale probe integration on a printed circuit board (PCB) using electroless TSV formation technology for achieving small scrub marks when testing solder microbumps formed on LSI wafers. The nanoprobes are resulted from the backside grinding and dry etching of Si substrates in which an array of Ni/Cu-TSVs with a tip diameter of 500 nm are fabricated. The TSV nanoprobes are also transferred to the PCB before the Si etch step. We demonstrate the probe contact to a thin solder layer for testing wafer-level packages with fine-pitch microbumps. In addition, the nanoprobes are electrically and mechanically characterized in this study.
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