1200V SC(肖特基控制注入)二极管，具有高载流子寿命的先进快速恢复概念

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694417

T. Matsudai, T. Ogura, Yuuichi Oshino, T. Naijo, Taichi Kobayashi, K. Nakamura

{"title":"1200V SC(肖特基控制注入)二极管，具有高载流子寿命的先进快速恢复概念","authors":"T. Matsudai, T. Ogura, Yuuichi Oshino, T. Naijo, Taichi Kobayashi, K. Nakamura","doi":"10.1109/ISPSD.2013.6694417","DOIUrl":null,"url":null,"abstract":"In this paper, a 1200V novel PiN-diode concept realizing low forward voltage drop (VF), low reverse recovery loss and low leakage current at high temperature over 175°C has been proposed. To realize these above-mentioned characteristics, this concept of 1200V diode design adopts a combination of flat and linear distribution of carrier concentration from anode side to cathode side and reducing injection efficiency at both sides at forward bias condition. This carrier profile can also realize reduction of voltage ringing effectively at reverse condition. Furthermore, we have successfully obtained high reverse recovery ruggedness combining a new edge termination design with Schottky contact.","PeriodicalId":175520,"journal":{"name":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"1200V SC(Schottky controlled injection)-diode, an advanced fast recovery concept with high carrier lifetime\",\"authors\":\"T. Matsudai, T. Ogura, Yuuichi Oshino, T. Naijo, Taichi Kobayashi, K. Nakamura\",\"doi\":\"10.1109/ISPSD.2013.6694417\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a 1200V novel PiN-diode concept realizing low forward voltage drop (VF), low reverse recovery loss and low leakage current at high temperature over 175°C has been proposed. To realize these above-mentioned characteristics, this concept of 1200V diode design adopts a combination of flat and linear distribution of carrier concentration from anode side to cathode side and reducing injection efficiency at both sides at forward bias condition. This carrier profile can also realize reduction of voltage ringing effectively at reverse condition. Furthermore, we have successfully obtained high reverse recovery ruggedness combining a new edge termination design with Schottky contact.\",\"PeriodicalId\":175520,\"journal\":{\"name\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2013.6694417\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2013.6694417","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

本文提出了一种在175℃以上高温下实现低正向压降(VF)、低反向恢复损耗和低漏电流的1200V新型pin -二极管概念。为了实现上述特性，本1200V二极管的设计理念采用了载流子浓度从阳极侧到阴极侧的平面线性分布，并在正偏压条件下降低了两侧的注入效率。这种载流子剖面还能有效地实现反向条件下电压环的抑制。此外，我们成功地获得了高反向恢复坚固性结合新的边缘终端设计与肖特基接触。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

1200V SC(Schottky controlled injection)-diode, an advanced fast recovery concept with high carrier lifetime

In this paper, a 1200V novel PiN-diode concept realizing low forward voltage drop (VF), low reverse recovery loss and low leakage current at high temperature over 175°C has been proposed. To realize these above-mentioned characteristics, this concept of 1200V diode design adopts a combination of flat and linear distribution of carrier concentration from anode side to cathode side and reducing injection efficiency at both sides at forward bias condition. This carrier profile can also realize reduction of voltage ringing effectively at reverse condition. Furthermore, we have successfully obtained high reverse recovery ruggedness combining a new edge termination design with Schottky contact.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

自引率

0.00%

发文量