用于SiC高压器件的2000 V以上FLR终端技术

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856817

H. Onose, S. Oikawa, T. Yatsuo, Y. Kobayashi

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引用次数: 17

摘要

为了确定SiC二极管和场效应管的高压技术，对限场环(FLR)终端结构进行了研究。采用4H - n型碳化硅制备了具有平面FLR终端的单质器件，并测定了其反向I-V特性。通过使用FLR终端，首次证明击穿电压高于2000 V。硼端部的最佳FLR间距比铝端部的更宽。这一差异被认为表明硼注入过程的横向扩散是显著的。

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Over 2000 V FLR termination technologies for SiC high voltage devices

The Field Limiting Ring (FLR) termination structures are examined in order to confirm the high voltage technology of SiC diodes and FETs. Elemental devices with planar FLR terminations are fabricated and their reverse I-V characteristics are determined using 4H n-type SiC. First demonstrations of breakdown voltages higher than 2000 V are succeeded by using FLR terminations. Optimal FLR spacing of the boron termination is wider than that of the aluminum case. This difference is considered to show that the lateral diffusion is remarkable for the process using boron implantation.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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