CVD铜作为铜电镀种子层的工艺集成及插件填充应用

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407) Pub Date : 2000-06-05 DOI:10.1109/IITC.2000.854276

Ki-Chul Park, Seungman Choi, Sun-jung Lee, K. Chang, Hyeon-deok Lee, Ho-Kyu Kang, Sang-In Lee

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引用次数: 0

摘要

CVD Cu薄膜在0.18 /spl mu/m技术中被评价为电镀Cu的种子层和后端Cu金属化的插件填充应用。良好的台阶覆盖和通过CVD Cu的plug-fill常规获得。与电离的PVD Cu种子层相比，CVD Cu薄膜的种子层性能有所提高。结果表明，在TaN和CVD Cu层之间只需40 /spl的Aring/ PVD Cu层就足以获得较低的过孔接触电阻。CVD制粒后镀铜方案的通孔电阻比CVD制粒后镀铜方案低约20%。

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Process integration of CVD Cu as a seed layer for Cu electroplating and a plug-fill application

CVD Cu film has been evaluated as a seed layer for Cu electroplating and a plug-fill application for back-end Cu metallization in 0.18 /spl mu/m technologies. Excellent step coverage and via plug-fill with CVD Cu were routinely obtained. CVD Cu film showed the enhanced seed layer performance compared to an ionized PVD Cu seed layer. It was found that only 40 /spl Aring/ PVD Cu interlayer between the TaN and CVD Cu layer is enough to obtain low via contact resistance. The scheme of the CVD Cu seed formation followed by Cu electroplating showed approximately 20% lower via resistance as compared to that of the CVD Cu plug-fill followed by Cu electroplating.

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Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407)

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