电压可扩展智能电源互补BiCMOS工艺中击穿现象的测量与模拟

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI:10.1109/BIPOL.1994.587879

R. Ryter, R. Zingg, W. Fichtner

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引用次数: 0

摘要

二维模拟和器件参数实验之间的良好一致性，特别是击穿电压，允许电压随截止频率缩放。对采用电压可扩展智能功率互补BiCMOS工艺制作的垂直NPN晶体管的击穿现象进行了测量和模拟，结果表明，在器件结构的不同空间位置出现了开基极击穿和开发射极击穿。

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Measurements and simulations of breakdown phenomena in a voltage-scalable smart power complementary BiCMOS process

Good agreement between 2-D simulations and experiments of device parameters, especially breakdown voltages, allows voltage scaling against cutoff frequency. Measurements and simulations of breakdown phenomena in vertical NPN transistors fabricated with a voltage-scalable smart power complementary BiCMOS process show that the open base and the open emitter breakdown occur at different spatial positions in the device structure.

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Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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