用于串行保护应用的4H-SiC高压限流装置的电气和电热2D模拟

12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) Pub Date : 2000-05-22 DOI:10.1109/ISPSD.2000.856827

F. Nallet, A. Sénès, D. Planson, M. Locatelli, J. Chante, D. Renault

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引用次数: 7

摘要

这项工作为固态功率器件提供了一个新的领域:研究了一种4H-SiC特定器件作为串行保护应用的限流器件。器件结构为垂直功率MOSFET，类似于现有的N沟道。利用ISE TCAD工具对其性能进行了仿真。对其电热行为进行了研究，证明了SiC在这一领域优于硅。

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Electrical and electrothermal 2D simulations of a 4H-SiC high voltage current limiting device for serial protection applications

This work presents a novel field for solid state power devices: a 4H-SiC specific device is examined as a current limiting device for serial protection application. The device structure is a vertical power MOSFET like with a existing N channel. Its performances is simulated with ISE TCAD tools. A study of its electrothermal behavior is presented, demonstrating the SiC superiority over silicon with regard to this field.

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12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094)

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