使用测试结构来识别CMOS输入的泄漏失效机制

ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures Pub Date : 1993-03-22 DOI:10.1109/ICMTS.1993.292884

J. Orchard-Webb

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引用次数: 0

摘要

输入结构被分解成简单的组件和组件的组合，并进行处理，以便可以清楚地了解设备在压力下的性能。对这些结构中的泄漏电流进行研究，然后用于确定整个装置中泄漏的位置和原因。失效机理是由厚氧化保护二极管的n/sup +/V/sub / dd连接边缘的反转引起的。

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The use of test structures to identify leakage failure mechanisms in CMOS inputs

An input structure is dissected into simple components and into combinations of components, and is processed so that the device performance under stress can be clearly understood. The study of leakage currents in these structures is then used to identify the location and cause of leakage in a complete device. The failure mechanism is shown to be caused by inversion at the edge of the n/sup +/V/sub dd/ connection of the thick oxide protection diode.<>

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ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures

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