集成分子识别传感器电子学在硅上使用纳米结构金属氧化物

2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2018-07-03 DOI:10.1109/VLSI-TSA.2018.8403827

T. Yanagida

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引用次数: 0

摘要

通过使用移动电子设备对环境和/或我们身体中的挥发性分子进行电传感是未来电子设备的一个重要问题。这是因为这些传感器电子产品将通过收集和分析数据对我们的日常生活和医疗保健产生影响。在各种传感器材料中，“金属氧化物”是环境大气中最丰富、最稳定的材料之一。然而，金属氧化物传感器在应用于CMOS传感器电子器件时有几个基本的困难。在这里，我展示了我们利用纳米金属氧化物[1-3]在硅上集成分子识别传感器的最新进展。

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Integrated molecule recognition sensor electronics using nanostructured metal oxides on silicon

Electrical sensing of volatile molecular species in environments and/or from our bodies by using mobile electronics is an important issue for future electronic devices. This is because these sensor electronics will have an impact on our daily life and healthcare via collecting and analyzing data. Among various sensor materials, "Metal Oxides" is one of the most abundant and robust materials in ambient atmosphere. However, metal oxide sensors have several essential difficulties when applying to CMOS sensor electronics. Here I show our recent progress as to integrated molecule recognition sensors by utilizing nano-metal oxides [1-3] on silicon.

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2018 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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