2.5D tb /s带宽图形模块中高带宽存储器(HBM)插播器的设计与信号完整性分析

Hyunsuk Lee, Kyungjun Cho, Heegon Kim, Sumin Choi, Jaemin Lim, H. Shim, Joungho Kim
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引用次数: 4

摘要

受tb /s带宽图形模块的工业需求的刺激,高带宽存储器(HBM)已经出现,以克服传统dram的局限性。此外,由于2.5D tb /s带宽图形模块中GPU与4 HBM之间的细间距和高密度互连路由,HBM interposer也得到了重视。然而,由于制造工艺的限制,HBM中介器出现了一些信号完整性问题。在本文中,我们在2.5D tb /s带宽图形模块中使用6层重分发层(RDL)和tsv来设计HBM中介器。然后,在设计的HBM中间层中,通过频域和时域仿真分析了采用M1、M3和M5层的HBM中间层通道的电学性能。仿真结果表明,所设计的HBM中介器具有良好的信号完整性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and signal integrity analysis of high bandwidth memory (HBM) interposer in 2.5D terabyte/s bandwidth graphics module
Spurred by the industrial demands for terabyte/s bandwidth graphics module, high bandwidth memory (HBM) has been emerged to overcome the limitations of conventional DRAMs. Additionally, due to the fine pitch and high density interconnect routing between GPU and 4 HBMs in 2.5D terabyte/s bandwidth graphics module, HBM interposer has also been to the force. However, several signal integrity issues of the HBM interposer occur due to the manufacturing process constraints. In this paper, we design the HBM interposer using 6 layers redistribution layer (RDL) and TSVs in 2.5D terabyte/s bandwidth graphics module. And then, in the designed HBM interposer, electrical performance of the HBM interposer channels using M1, M3, and M5 layer is analyzed by simulation in the frequency-and time-domain. With the simulation results, it is observed that the designed HBM interposer shows good signal integrity.
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