化学气相沉积法获得的硅纳米晶存储器的性能及其在非易失性存储器进一步扩展方面的潜力

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI:10.1109/ICICDT.2004.1309902

Cosimo Gerardi, B. DeSalvo, S. Lombardo, Thierry Baron

{"title":"化学气相沉积法获得的硅纳米晶存储器的性能及其在非易失性存储器进一步扩展方面的潜力","authors":"Cosimo Gerardi, B. DeSalvo, S. Lombardo, Thierry Baron","doi":"10.1109/ICICDT.2004.1309902","DOIUrl":null,"url":null,"abstract":"We have fabricated nanocrystal memories both single cells and arrays by using low pressure chemical vapor deposition of silicon nanocrystals. The potentialities of nanocrystal memories are discussed both in terms of nanocrystal deposition and control dielectrics optimization. Excellent performances are achieved, showing that this technology shows potentialities for non volatile memory cell scaling. In addition we discuss the impact of the fluctuations in nanocrystals distribution on the scaling possibilities of these memories.","PeriodicalId":158994,"journal":{"name":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Performances of Si nanocrystal memories obtained by by CVD and their potentialities to further scaling of non-volatile memories\",\"authors\":\"Cosimo Gerardi, B. DeSalvo, S. Lombardo, Thierry Baron\",\"doi\":\"10.1109/ICICDT.2004.1309902\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have fabricated nanocrystal memories both single cells and arrays by using low pressure chemical vapor deposition of silicon nanocrystals. The potentialities of nanocrystal memories are discussed both in terms of nanocrystal deposition and control dielectrics optimization. Excellent performances are achieved, showing that this technology shows potentialities for non volatile memory cell scaling. In addition we discuss the impact of the fluctuations in nanocrystals distribution on the scaling possibilities of these memories.\",\"PeriodicalId\":158994,\"journal\":{\"name\":\"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)\",\"volume\":\"94 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2004.1309902\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2004.1309902","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

我们利用硅纳米晶体的低压化学气相沉积技术制备了单细胞和阵列的纳米晶体存储器。从纳米晶沉积和控制电介质优化两个方面讨论了纳米晶存储器的潜力。取得了优异的性能，表明该技术具有非易失性存储单元扩展的潜力。此外，我们还讨论了纳米晶体分布的波动对这些存储器的缩放可能性的影响。

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Performances of Si nanocrystal memories obtained by by CVD and their potentialities to further scaling of non-volatile memories

We have fabricated nanocrystal memories both single cells and arrays by using low pressure chemical vapor deposition of silicon nanocrystals. The potentialities of nanocrystal memories are discussed both in terms of nanocrystal deposition and control dielectrics optimization. Excellent performances are achieved, showing that this technology shows potentialities for non volatile memory cell scaling. In addition we discuss the impact of the fluctuations in nanocrystals distribution on the scaling possibilities of these memories.

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来源期刊

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)

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