H2/Ar等离子体处理对夹在氧化硅基体之间的Sige纳米粒子光电性的影响

2018 International Semiconductor Conference (CAS) Pub Date : 2018-10-01 DOI:10.1109/SMICND.2018.8539761

M. T. Sultan, J. Gudmundsson, A. Manolescu, M.L. Ciureai, H. Svavarsson

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引用次数: 1

摘要

研究了室温氢等离子体处理对含SiGe纳米颗粒SiO2基体光导性能的影响。等离子体处理后，光电流强度显著增加。增加的部分原因是纳米颗粒周围悬浮键的中和，部分原因是基体和纳米颗粒-基体界面中非辐射中心和缺陷的钝化。

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The Effect of H2/Ar Plasma Treatment Over Photoconductivity of Sige Nanoparticles Sandwiched Between Silicon Oxide Matrix

The effect of room temperature hydrogen plasma treatment on the photoconductive properties of the SiO2 matrix containing SiGe nanoparticles is investigated. A considerable increase in photocurrent intensity is observed after plasma treatment. The increase is partly attributed to neutralization of dangling bonds around the nanoparticles and partly to passivation of non-radiative centers and defects in the matrix and at the nanoparticles-matrix interfaces.

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2018 International Semiconductor Conference (CAS)

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