{"title":"使用高达100 MHz的新型测量系统对MOSFET进行从低频噪声到热噪声的连续表征","authors":"K. Ohmori, R. Hasunuma, W. Feng, K. Yamada","doi":"10.1109/VLSIT.2012.6242502","DOIUrl":null,"url":null,"abstract":"We have developed a novel system for characterizing higher-frequency noise properties of MOSFETs under DC-biases up to 100 MHz. A low-noise amplifier (LNA) was mounted on a unique micro probe-card so that the signal from DUT (on a wafer) is captured with lesser losses. Using this new approach, we have successfully demonstrated the transition of low-frequency (LF) noise to high-frequency (HF) noise, such as thermal noise. In addition, the change in the factors of noise results in lowing the standard variation of noise in a HF region, where intrinsic phenomena derived from the channel conductance play a key roll.","PeriodicalId":266298,"journal":{"name":"2012 Symposium on VLSI Technology (VLSIT)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Continuous characterization of MOSFET from low-frequency noise to thermal noise using a novel measurement system up to 100 MHz\",\"authors\":\"K. Ohmori, R. Hasunuma, W. Feng, K. Yamada\",\"doi\":\"10.1109/VLSIT.2012.6242502\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed a novel system for characterizing higher-frequency noise properties of MOSFETs under DC-biases up to 100 MHz. A low-noise amplifier (LNA) was mounted on a unique micro probe-card so that the signal from DUT (on a wafer) is captured with lesser losses. Using this new approach, we have successfully demonstrated the transition of low-frequency (LF) noise to high-frequency (HF) noise, such as thermal noise. In addition, the change in the factors of noise results in lowing the standard variation of noise in a HF region, where intrinsic phenomena derived from the channel conductance play a key roll.\",\"PeriodicalId\":266298,\"journal\":{\"name\":\"2012 Symposium on VLSI Technology (VLSIT)\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 Symposium on VLSI Technology (VLSIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2012.6242502\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Symposium on VLSI Technology (VLSIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2012.6242502","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Continuous characterization of MOSFET from low-frequency noise to thermal noise using a novel measurement system up to 100 MHz
We have developed a novel system for characterizing higher-frequency noise properties of MOSFETs under DC-biases up to 100 MHz. A low-noise amplifier (LNA) was mounted on a unique micro probe-card so that the signal from DUT (on a wafer) is captured with lesser losses. Using this new approach, we have successfully demonstrated the transition of low-frequency (LF) noise to high-frequency (HF) noise, such as thermal noise. In addition, the change in the factors of noise results in lowing the standard variation of noise in a HF region, where intrinsic phenomena derived from the channel conductance play a key roll.