双模垂直膜谐振压力传感器

R. Tabrizian, F. Ayazi
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引用次数: 10

摘要

本文提出了一种新型的双模谐振压力传感器,其工作原理是基于空气分子在横向共振垂直硅膜上的质量载荷。两个硅体声谐振器(SiBAR)通过垂直薄膜进行声耦合,产生两种高g共振模式,频率分裂小,但压力灵敏度差异大。该膜的设计目的是在不改变其共振频率的情况下,通过压力不敏感的拉伸兰姆波耦合压电感应sibar的180°异相振动。另一方面,同相振动在垂直膜中引起高阶压敏横向弯曲共振,同时由于刚度和质量载荷的影响,SiBAR的共振频率略有改变。这两种模式的组合被用作具有放大灵敏度的压力传感器。概念验证器件实现在20 μm硅衬底上,由薄氮化铝膜激活,其组合节拍频率(fb)为1.3 MHz,线性压力灵敏度为346ppm /kPa,范围为0-100kPa。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Dual-mode vertical membrane resonant pressure sensor
This paper presents a novel dual-mode resonant pressure sensor operating based on mass loading of air molecules on transversely resonating vertical silicon membranes. Two silicon bulk acoustic resonators (SiBAR) are acoustically coupled through thin vertical membranes, resulting in two high-g resonance modes with small frequency split, but large difference in pressure sensitivity. The membranes are designed to couple 180° out-of-phase vibrations of piezoelectrically-transduced SiBARs through pressure-insensitive extensional Lamb waves and without changing their resonance frequency. The in-phase vibrations, on the other hand, induce a high-order pressure-sensitive transverse flexural resonance in vertical membranes while slightly changing the resonance frequency of SiBAR due to stiffness and mass loading. A combinatorial of the two modes is used as a pressure sensor with an amplified sensitivity. A proof-of-concept device implemented on a 20 μm silicon substrate and activated by a thin aluminum nitride film shows a combinatorial beat frequency (fb) of 1.3 MHz with a linear pressure sensitivity of 346 ppm/kPa over 0-100kPa range.
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