具有垂直极性反转异质结构的增强模式单门双极多通道GaN HEMT的设计

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694481

P. Feng, K. Teo, T. Oishi, K. Yamanaka, R. Ma

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引用次数: 2

摘要

我们提出了一种新型氮化镓器件的设计和仿真研究，该器件由不同极性的氮化镓堆叠组成，通过柔性栅极控制提供多个通道。校准后的TCAD器件仿真显示了0.62 μm门长多通道晶体管的器件特性。e模式操作表明，在Vds = 0.1 V时，所有多通道器件都具有低于2 V的正小阈值电压Vth，并且在器件内诱导的4通道可实现高达4 a /mm的高导通电流Ion (Vgs = Vds = 4 V)。

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Design of enhancement mode single-gate and doublegate multi-channel GaN HEMT with vertical polarity inversion heterostructure

We propose the design and simulation study of novel gallium nitride (GaN) devices, consisting of nitride stacks with different polarity, to provide multiple channels by flexible gate(s) control. Calibrated TCAD device simulations visualize device characteristics of 0.62-μm-gate-length multi-channel transistors. E-mode operations demonstrate a positive small threshold voltage V_th below 2 V at V_ds = 0.1 V for all multichannel devices, and a high on-state current I_on (V_gs = V_ds = 4 V) up to 4 A/mm achieved by 4 channels induced within the device.

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2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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