隔离通道基极电阻控制晶闸管

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI:10.1109/ISPSD.1995.515028

V. Parthasarathy, A. Bhalla, T. Chow

{"title":"隔离通道基极电阻控制晶闸管","authors":"V. Parthasarathy, A. Bhalla, T. Chow","doi":"10.1109/ISPSD.1995.515028","DOIUrl":null,"url":null,"abstract":"A novel 550 V MOS-gated thyristor structure called the Isolated Channel Base Resistance Controlled Thyristor (ICBRT) is proposed in this paper. This new structure incorporates a p+ diffusion adjacent to the p-base of the conventional Base Resistance Controlled Thyristor (BRT) to improve its turn-off capability. The desirable gate controlled turn-on and turn-off features of the BRT are retained in the ICBRT along with separate turn-on and turn-off gates. A 70% improvement in the maximum controllable current density is predicted in numerical analysis and is confirmed by experimental measurements. This improvement is obtained with no sacrifice in device characteristics or process complexity.","PeriodicalId":200109,"journal":{"name":"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"ICBRT-an isolated channel base resistance controlled thyristor\",\"authors\":\"V. Parthasarathy, A. Bhalla, T. Chow\",\"doi\":\"10.1109/ISPSD.1995.515028\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel 550 V MOS-gated thyristor structure called the Isolated Channel Base Resistance Controlled Thyristor (ICBRT) is proposed in this paper. This new structure incorporates a p+ diffusion adjacent to the p-base of the conventional Base Resistance Controlled Thyristor (BRT) to improve its turn-off capability. The desirable gate controlled turn-on and turn-off features of the BRT are retained in the ICBRT along with separate turn-on and turn-off gates. A 70% improvement in the maximum controllable current density is predicted in numerical analysis and is confirmed by experimental measurements. This improvement is obtained with no sacrifice in device characteristics or process complexity.\",\"PeriodicalId\":200109,\"journal\":{\"name\":\"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1995.515028\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1995.515028","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文提出了一种新的550v mos门控晶闸管结构，称为隔离通道基极电阻控制晶闸管(ICBRT)。这种新结构在传统基极电阻控制晶闸管(BRT)的p基附近加入了p+扩散，以提高其关断能力。在ICBRT中保留了BRT的理想的门控开闭特性以及单独的开闭门。在数值分析中预测最大可控电流密度提高了70%，并通过实验测量得到了证实。这种改进是在不牺牲设备特性或工艺复杂性的情况下获得的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ICBRT-an isolated channel base resistance controlled thyristor

A novel 550 V MOS-gated thyristor structure called the Isolated Channel Base Resistance Controlled Thyristor (ICBRT) is proposed in this paper. This new structure incorporates a p+ diffusion adjacent to the p-base of the conventional Base Resistance Controlled Thyristor (BRT) to improve its turn-off capability. The desirable gate controlled turn-on and turn-off features of the BRT are retained in the ICBRT along with separate turn-on and turn-off gates. A 70% improvement in the maximum controllable current density is predicted in numerical analysis and is confirmed by experimental measurements. This improvement is obtained with no sacrifice in device characteristics or process complexity.

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Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

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