SWAMI隔离导致的CMOS MOSFET器件管路缺陷

30th Annual Proceedings Reliability Physics 1992 Pub Date : 1992-03-01 DOI:10.1109/RELPHY.1992.187628

C.T. Wang, H. Haddad, P. Berndt, B. Yeh, B. Connors

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引用次数: 7

摘要

在n沟道MOSFET中，一个管道缺陷成为漏源和漏极之间的泄漏通道。经过20秒的蚀刻，可以清晰地勾勒出管道的轮廓。管道的原因是不正确的SWAMI(侧壁屏蔽隔离)蚀刻，在孤岛角产生应力。这种应力产生了高密度的位错线，这使得空位很容易用于增强磷的扩散。

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Pipeline defects in CMOS MOSFET devices caused by SWAMI isolation

A pipeline defect which became a leakage path between source and drain in an n-channel MOSFET was identified. It was found that a 20-second Wright-etch will clearly delineate the pipe. The cause of the pipeline was the improper SWAMI (side wall masked isolation) etch which generated stress at the island corners. This stress generated high density dislocation lines which made vacancies readily available for enhanced phosphorus diffusion.<>

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30th Annual Proceedings Reliability Physics 1992

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